New-laptop-battery - Sanyo listed on-resistance of only 10.5 m 次 lithium battery protection circuit MOSFET
Monday, August 4, 2008
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Sanyo listed on-resistance of only 10.5 m 次 lithium battery protection circuit MOSFET
Sanyo will be in September 2008 has been followed by volume production of small-resistance and other characteristics of the lithium-ion rechargeable battery protection circuit with n-type MOSFET "ECH8", "EMH8" and "EFCP" 3 series 11 kinds of products. Mainly for the use of mobile phones using a series or two lithium-ion rechargeable ThinkPad battery use. As low-resistance, in addition to improve battery-powered time, can also support rapid charging, and so on.
The characteristics of new products, through the use of Sanyo Electric, the fourth generation gap technology (cell spacing of 2.1 米 m, design rules to 0.25 米 m) chip, the lower-resistance. And, ECH8 and EMH8 two series did not use wire bonding (Wire Bonding), but through the use of copper wire connected to the "folder welding (Clip Bonding)", so that shape resistance to 1 m 次 below, to the original 1 / 10 . From this, "ECH8651R" (Dimension 2.9 mm ℅ 2.8mm ℅ 0.9mm, pressure 24 V) achieved a 4.5 V load voltage in the on-resistance (RDSon) was only 10.5 m 次.
Dimensions 2.9 mm ℅ 2.8mm ℅ 0.9mm of ECH8 a total of five kinds of products. - Resistance to 10.5 m ~ 18m 次. Pressure has 24 V and 30 V goods. EMH8 series total of three kinds of products. Dimensions for the 2.0 mm ℅ 2.1mm ℅ 0.75mm, width and height than ECH8 small, to package smaller than 3 mm in width of the protection circuit on the floor. On-resistance for 19 ~ 28 m 次. Pressure is 20 V, 24V and 30 V goods.
On the other hand, EFCP series can be used directly through the tin-chip package structure of the CSP. Thus width and height than the EMH series of even smaller. EFCP have a series of Dimensions for the 1.61 mm ℅ 1.61mm ℅ 0.55mm and 2, Dimension to 1.81 mm ℅ 1.81mm ℅ 0.55mm products. EFCP series with the chip will charge and discharge MOSFET MOSFET used to link up to 4 video battery package.